Radiation Damage and Annealing in 1310nm InGaAsP/InP Lasers for the CMS Tracker

Radiation damage in 1310nm InGaAsP/InP multi-quantum-well lasers caused by 0.8MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a uniform distribution of activation energies for annealing. This model can then be used to predict the long-term damage expected for lasers operating inside the CMS tracker. * Corresponding author. E-mail: [email protected], telephone: (+41) 22 7678583, fax: (+41) 22 7672800